Breakthrough crystal growth process for SiC

Xtal.works has developed a new fast gas-based process for growing SiC crystals called "Fiammetta", a novel engine of creation. Thanks to its high precursor efficiency, the method can rapidly accelerate growth rates using minimal amounts of energy and graphite. The Fiammetta growth technique is ideally suited for synthesizing large diameter SiC substrates for power electronics and high purity semi-insulating (HPSI) applications. Empirical results not only validate the detailed calculations and complex models underlying the approach, but also demonstrate the capability of Fiammetta to manipulate and influence the crystal growth process with unprecedented levels of precision. Consequently, inchoate SiC crystals can be accurately shaped and augmented without applying any thermal gradients. “In concert with our partners, we believe it’s feasible to fabricate 200mm and potentially 300mm diameter SiC substrates by the end of 2025” says Karl-David Läpple, CEO of Xtal.works.