Xtal.works received their first grant!

Xtal.works [ˈkrɪstəl wɜrks] have secured their first grant from the Swedish Energy Agency (Energimyndigheten) to advance their innovative silicon carbide (SiC) crystal growth technology. Their gas-based process is set to revolutionize the industry with rapid growth rates on 200 mm substrates and exceptional quality. Thanks to higher operating pressures, Xtal.works is able to achieve in-situ monitoring during growth - a significant improvement over current methods.

"This grant is an important milestone for us. Together with our second pre-seed funding, it enables us to demonstrate the potential of our breakthrough technology," said Karl-David Läpple, CEO of Xtal.works. "We are well on our way to achieving our milestones for the seed investment.”

Our high growth rates and in-situ monitoring capabilities offer significant advantages in SiC crystal development. "Instead of waiting days or weeks to evaluate crystal quality, we get immediate insights", explains CTO Nerijus Armakavicius. "In addition, low thermal gradients create optimal conditions to minimize structural defects such as basal plane dislocations (BPDs)."

Karl-David Läpple adds: "One of the most exciting aspects of our method is its low energy consumption, which fits perfectly with our sustainability goals.”